Paper Title:
Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs
  Abstract

To study the mobility limiting mechanisms in (0001) 4H-SiC and 6H-SiC MOSFETs, physics based modeling of the inversion mobility of has been done. Two very different limiting mechanisms have been found for 4H-SiC and 6H-SiC MOSFETs. The mobility in 6H-SiC MOSFETs is limited by phonon scattering while the 4H-SiC MOSFET mobility is limited by Coulombic at low electric fields and surface roughness scattering at high electric fields.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
595-598
DOI
10.4028/www.scientific.net/MSF.679-680.595
Citation
H. Naik, T. P. Chow, "Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs", Materials Science Forum, Vols. 679-680, pp. 595-598, 2011
Online since
March 2011
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Price
$32.00
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