Paper Title:
Instability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants
  Abstract

Instability of metal-oxide-semiconductor field-effect transistor (MOSFET) characteristics was evaluated by DC and pulse current-voltage (I-V) measurements. MOSFETs with nirided gate oxides were fabricated on C-face 4H-SiC. Their interfaces have near interface traps (NITs) with long time constants, depending on the cooling down process after nitridation. Such devices exhibited a large hysteresis in DC I-V and a large transient current in pulse I-V measurements. These phenomena can be explained by the charge state of NITs due to capture/emission of electrons in the channel.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
603-606
DOI
10.4028/www.scientific.net/MSF.679-680.603
Citation
H. Yano, Y. Oshiro, D. Okamoto, T. Hatayama, T. Fuyuki, "Instability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants", Materials Science Forum, Vols. 679-680, pp. 603-606, 2011
Online since
March 2011
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Price
$32.00
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