Paper Title:
Schottky Barrier 3C-SiC Nanowire Field Effect Transistor
  Abstract

Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowire (NW) were fabricated. Devices with rectifying Source (S) and Drain (D) contacts have been observed. In contrast with the ohmic-like devices reported in the literature, the Schottky contact barrier (SB) at S/ D regions acts beneficially for the FET performance by suppressing the off-current. At high positive gate voltages (>10 V), the Schottky barriers tend to be more transparent leading to ION/IOFF ratio equal to ~ 103 in contrast to the weak gating effect of the ohmic-contacted 3C-SiC NWFETs.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
613-616
DOI
10.4028/www.scientific.net/MSF.679-680.613
Citation
K. Rogdakis, E. Bano, L. Montes, M. Bechelany, D. Cornu, K. Zekentes, "Schottky Barrier 3C-SiC Nanowire Field Effect Transistor", Materials Science Forum, Vols. 679-680, pp. 613-616, 2011
Online since
March 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Konstantinos Rogdakis, Edwige Bano, Laurent Montes, M. Bechelany, David Cornu, Konstantinos Zekentes
Abstract:Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowires (NWs) were fabricated and electrical...
1235
Authors: M.N. Md Nuzaihan, U. Hashim, Mohd Khairuddin Md Arshad, A. Rahim Ruslinda, A.H. Azman
Abstract:In this work, we report the geometrical characteristics and the electrical performance of silicon nanowires array for pH level detection. The...
219
Authors: Noraini Othman, Mohd Khairuddin Md Arshad, Syarifah Norfaezah Sabki, U. Hashim
Abstract:This paper reviews the different UTBB SOI MOSFET structures and their superiority in suppressing short-channel effects (SCEs). As the gate...
257