Paper Title:
Optimization of SiC MESFET for High Power and High Frequency Applications
  Abstract

SiC MESFETs were scaled both laterally and vertically to optimize high frequency and high power performance. Two types of epi-stacks of SiC MESFETs were fabricated and measured. The first type has a doping of 3×1017 cm-3 in the channel and the second type has higher doping (5×1017 cm-3) in the channel. The higher doping allows the channel to be thinner for the same current density and therefore a reduction of the aspect ratio is possible. This could impede short channel effects. For the material with higher channel doping the maximum transconductance is 58 mS/mm. The maximum current gain frequency, fT, and maximum frequency of oscillation, fmax, is 9.8 GHz and 23.9 GHz, and 12.4 GHz and 28.2 GHz for the MESFET with lower doped channel and higher doping, respectively.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
629-632
DOI
10.4028/www.scientific.net/MSF.679-680.629
Citation
N. Ejebjörk, H. Zirath, P. Bergman, B. Magnusson, N. Rorsman, "Optimization of SiC MESFET for High Power and High Frequency Applications", Materials Science Forum, Vols. 679-680, pp. 629-632, 2011
Online since
March 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Ming Kwei Lee, Tsung Hsiang Shih, Chen Lia Ho, Hung Chang Lee, Chih Feng Yen, Hwai Fu Tu, Cho Han Fan
Abstract:High quality nano-scaled fluorine and nitrogen co-doped anatase phase TiO2 can be obtained from the conversion of ammonium...
1474
Authors: Hideharu Matsuura, Hideki Yanagisawa, Kozo Nishino, Takunori Nojiri, Shinobu Onoda, Takeshi Ohshima
Abstract:The mechanisms for the reduction in the hole concentration in lightly Al-doped p-type 4H-SiC epilayers by electron irradiation as well as in...
181
Authors: Chun Hong Mu, Ying Li Liu, Yuan Qiang Song, Huai Wu Zhang, Peng Liu
Abstract:CaCu3Ti4O12 presents colossal dielectric permittivity within a large temperature and frequency range, which...
321
Authors: Geunsik Lim, Tariq Manzur, Aravinda Kar
Chapter 6: SiC Devices, Circuits and Systems
Abstract:An uncooled SiC-based electro-optic device is developed for gas sensing applications. P-type dopants Ga, Sc, P and Al are incorporated into...
1195
Authors: M. Rajendraprasad Reddy, Mutsumi Sugiyama, K. T. Ramakrishna Reddy
Chapter 13: Thin Films
Abstract:Nickel-doped ZnO thin films with different Ni contents (0 - 15%) were deposited on glass substrate at 350°C by a spray pyrolysis technique....
1423