Paper Title:
1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation
  Abstract

DMOSFETs fabricated in 4H-SiC with capabilities for blocking in excess of 1700V and conducting 20A continuous current in the on-state are presented. These SiC DMOSFETs remain functional to temperatures in excess of 225°C, with leakage current at 1700V at 225°C of less than 5 A with VGS = 0V. The DMOSFETs show excellent switching characteristics, with total switching energy of 1.8 to 1.95 mJ over the entire temperature range of testing (25°C to 200°C), when switched from the blocking state at 1200V to conducting at 20A in a clamped inductive load switching circuit. The electrical characteristics are compared to commercially available Si IGBTs rated to 1700V with similar current ratings as the SiC DMOSFET described herein.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
633-636
DOI
10.4028/www.scientific.net/MSF.679-680.633
Citation
B. A. Hull, S. H. Ryu, Q. J. Zhang, C. Jonas, M. J. O'Loughlin, R. Callanan, J. W. Palmour, "1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation", Materials Science Forum, Vols. 679-680, pp. 633-636, 2011
Online since
March 2011
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Price
$32.00
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