Paper Title:
A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices
  Abstract

Equivalent sized (4.5 mm2 die area), 1200 V, 4H-SiC, vertical trench Junction Field Effect Transistors (JFETs) were characterized in terms of DC and switching performance. The 100 mΩ Enhancement-Mode (EM) JFET was found to have natural advantages in safe operation being normally-off, whereas the Depletion-Mode (DM) JFET was found to have advantages with ~ twice as high saturation current, less on-resistance (85 mΩ) and no gate current required in the on-state. The JFETs were found to both have radically less (five to ten times) switching energies than corresponding 1200 V Si transistors, with the DM JFET and EM JFET having EON and EOFF of only 115 µJ and 173 µJ, respectively when tested at half-rated voltage (600 V) and 12 A.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
641-644
DOI
10.4028/www.scientific.net/MSF.679-680.641
Citation
J. B. Casady, D. C. Sheridan, R. L. Kelley, V. Bondarenko, A. Ritenour, "A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices", Materials Science Forum, Vols. 679-680, pp. 641-644, 2011
Online since
March 2011
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Price
$32.00
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