Paper Title:
Fabrication of P-Channel MOSFETs on 4H-SiC C-Face
  Abstract

We investigated the 4H-SiC C-face MOS interface properties around valence-band, and fabricated 4H-SiC C-face p-channel MOSFETs for the first time. For C-face p-channel MOSFETs, relatively low-temperature wet-gate-oxidation was preferable. Post-deposition-annealing for contact metal was found to degrade the C-face MOS interface around valence-band. Low-temperature (800°C) PDA in hydrogen including ambient was effective to some extent in order to suppress the degradation owing annealing. We obtained C-face p-channel MOSFET with normal FET operation by utilizing 900°C wet-gate-oxidation and 800°C PDA in He-H2 forming gas ambient.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
653-656
DOI
10.4028/www.scientific.net/MSF.679-680.653
Citation
M. Okamoto, M. Iijima, T. Yatsuo, T. Nagano, K. Fukuda, H. Okumura, "Fabrication of P-Channel MOSFETs on 4H-SiC C-Face", Materials Science Forum, Vols. 679-680, pp. 653-656, 2011
Online since
March 2011
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Price
$32.00
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