Paper Title:
Extraordinary Characteristics of 4H-SiC Trench MOSFETs on Large Off-Axis Substrates
  Abstract

We investigated electrical properties of 4H-SiC trench metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated on (000_,1) C-face substrates with various off-axis angles. Off-axis angles and directions are 4o, 8o, and 15o towards [__,1120] and 8o towards [1_,100] directions. Most trench MOSFETs showed good on-state performance. Peculiar characteristics that field-effect mobility was 103 cm2/Vs in spite of a relatively high acceptor concentration of 1 × 1017 cm−3 in the channel region were observed for trench MOSFET on 15o-off substrates. From crystallographic analysis, this face is (11_,20) with 15o off towards [000_,1] direction. We can expect that this face has quite good MOS interface properties.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
666-669
DOI
10.4028/www.scientific.net/MSF.679-680.666
Citation
Y. Ueoka, H. Yano, D. Okamoto, T. Hatayama, T. Fuyuki, "Extraordinary Characteristics of 4H-SiC Trench MOSFETs on Large Off-Axis Substrates", Materials Science Forum, Vols. 679-680, pp. 666-669, 2011
Online since
March 2011
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