We investigated electrical properties of 4H-SiC trench metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated on (000_,1) C-face substrates with various off-axis angles. Off-axis angles and directions are 4o, 8o, and 15o towards [__,1120] and 8o towards [1_,100] directions. Most trench MOSFETs showed good on-state performance. Peculiar characteristics that field-effect mobility was 103 cm2/Vs in spite of a relatively high acceptor concentration of 1 × 1017 cm−3 in the channel region were observed for trench MOSFET on 15o-off substrates. From crystallographic analysis, this face is (11_,20) with 15o off towards [000_,1] direction. We can expect that this face has quite good MOS interface properties.