Paper Title:
Extraordinary Characteristics of 4H-SiC Trench MOSFETs on Large Off-Axis Substrates
| Periodical | Materials Science Forum (Volumes 679 - 680) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2010 |
| Edited by | Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson |
| Pages | 666-669 |
| DOI | 10.4028/www.scientific.net/MSF.679-680.666 |
| Citation | Yoshihiro Ueoka et al., 2011, Materials Science Forum, 679-680, 666 |
| Online since | March, 2011 |
| Authors | Yoshihiro Ueoka, Hiroshi Yano, Dai Okamoto, Tomoaki Hatayama, Takashi Fuyuki |
| Keywords | MOSFET, Off-Axis, Silicon Carbide (SiC), Trench |
| Price | US$ 28,- |
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Abstract
We investigated electrical properties of 4H-SiC trench metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated on (000_,1) C-face substrates with various off-axis angles. Off-axis angles and directions are 4o, 8o, and 15o towards [__,1120] and 8o towards [1_,100] directions. Most trench MOSFETs showed good on-state performance. Peculiar characteristics that field-effect mobility was 103 cm2/Vs in spite of a relatively high acceptor concentration of 1 × 1017 cm−3 in the channel region were observed for trench MOSFET on 15o-off substrates. From crystallographic analysis, this face is (11_,20) with 15o off towards [000_,1] direction. We can expect that this face has quite good MOS interface properties.
