Paper Title:
Reduction of the Surface Density of Single Shockley Faults by TCS Growth Process
  Abstract

Spatially resolved micro-photoluminescence has been used to study the Single Shockley faults surface density and properties on 4H-SiC epitaxial layers. The improvement of quality of epitaxial layers due to the chemical vapor deposition process has been studied by measuring the reduction of mean density of Single Shockley faults. The change of faults density has been correlated to the different precursor gas used for the growth. In fact trichlorosilane has been used instead of silane. The change of precursor led to two different advantages: the reduction of basal plane dislocation surface density and the capability to increase the growth rate of the process. Both these features allow reducing the density of Single Shockley faults.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
67-70
DOI
10.4028/www.scientific.net/MSF.679-680.67
Citation
A. Canino, M. Camarda, F. La Via, "Reduction of the Surface Density of Single Shockley Faults by TCS Growth Process", Materials Science Forum, Vols. 679-680, pp. 67-70, 2011
Online since
March 2011
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Price
$32.00
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