Paper Title:
Characterisation of HfO2/Si/SiC MOS Capacitors
  Abstract

In this paper, the integration of HfO2 onto SiC has been investigated via a number of different test structures. Capacitors consisting of HfO2 on Si, SiC, Si/SiC and SiO2/SiC have been fabricated and electrically tested. The new HfO2/Si/SiC capacitors provide the greatest breakdown electric field of 3.5 MV/cm, whilst leakage currents are minimised through the insertion of the narrow bandgap material. The Si layer, which is wafer bonded to the SiC, is proven to be stress free through Raman spectroscopy, whilst TEM and EDX prove that the interface is free of contaminants.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
674-677
DOI
10.4028/www.scientific.net/MSF.679-680.674
Citation
P. M. Gammon, A. Pérez-Tomás, M. R. Jennings, O. J. Guy, N. Rimmer, J. Llobet, N. Mestres, P. Godignon, M. Placidi, M. Zabala, J. A. Covington, P. A. Mawby, "Characterisation of HfO2/Si/SiC MOS Capacitors", Materials Science Forum, Vols. 679-680, pp. 674-677, 2011
Online since
March 2011
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