Paper Title:
Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs
  Abstract

The effect of using two different polytypes, 4H-SiC and 6H-SiC, on the performance of (0001) SiC MOSFETs has been studied. 4H-SiC and 6H-SiC MOSFETs have been fabricated with deposited gate oxides followed by oxidation in dry O2 or NO. Device parameters, particularly field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted. We have also compared the mobility-limiting mechanisms of (0001) 4H and 6H-SiC MOSFETs and found that inversion mobility can be further improved in 4H-SiC, but not 6H-SiC.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
678-681
DOI
10.4028/www.scientific.net/MSF.679-680.678
Citation
H. Naik, T. P. Chow, "Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs", Materials Science Forum, Vols. 679-680, pp. 678-681, 2011
Online since
March 2011
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Price
$35.00
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