Paper Title:
Pulse Current Characterization of SiC GTO Thyristors
  Abstract

With a focus on pulsed power applications, this paper presents results of the pulse current characterization of GTO thyristors developed and fabricated within a previous ISL funded project. Limited by the pulse current capability of the bonding wire connection, the devices demonstrated to handle a peak current of up to 6 kA/cm2 (about 20 µs FWHM). Pulse tests of Al wires indicate that two 50 µm wires should be sufficient to test a 1 mm2 device up to a peak current of 30 kA/cm2.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
682-685
DOI
10.4028/www.scientific.net/MSF.679-680.682
Citation
S. Scharnholz, B. Vergne, J. P. Konrath, G. Pâques, V. Zorngiebel, "Pulse Current Characterization of SiC GTO Thyristors", Materials Science Forum, Vols. 679-680, pp. 682-685, 2011
Online since
March 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Rajanna, S. Tanaka, Toshio Itoh, Masayoshi Esashi
1527
Authors: Boo Yang Jung, Eun Kyoung Choi, Young Soo Jeon, Kwang Yong Lee, Kwang Seok Seo, Tae Sung Oh
Abstract:For flip-chip process of RF system-on-packages(SOP), double bump bonding processes were investigated. Sn-Ag and Sn solder joints were formed...
25
Authors: Yuan Chen, Xiao Wen Zhang
Abstract:Focused ion beam (FIB) system is a powerful microfabrication tool which uses electronic lenses to focus the ion beam even up to nanometer...
2171
Authors: Yu Ling Shang, Chun Quan Li, Hua Qing Xiong, En Min Tan
Abstract:Electrical performance of bonding wire is critical to the reliability of electrical interconnection systems of chip-level packaging for high...
404
Authors: Michael R. Jennings, Amador Pérez-Tomás, Andrea Severino, Peter Ward, Arif Bashir, Craig Fisher, Stephen M. Thomas, Peter M. Gammon, Benedict T. Donnellan, Hua Rong, D.P. Hamilton, Philip A. Mawby
Chapter 4: Epitaxial Growth 3C SiC
Abstract:In this paper, we report on a novel direct wafer bonding technique; Si (111) wafers to polycrystalline silicon carbide carrier wafers. The...
271