Paper Title:
1200 V SiC BJTs with Low VCESAT and High Temperature Capability
  Abstract

Vertical epitaxial NPN SiC BJTs for 1200 V rating were fabricated. Very low collector-emitter saturation voltages VCESAT=0.5 V at IC=6 A (JC=140 A/cm2) and T=25 °C and VCESAT=1.0 V at IC=6 A and T=250 °C were measured. The common emitter current gain at IC=6 A is 71 at T=25 °C and 32 at T=250 °C, respectively. A SPICE model was developed for the BJT including the parasitic capacitances of the internal pn junctions, as well as temperature dependence of the current gain and the collector series resistance. The IC-VCE characteristics of the BJT are in good agreement with the SPICE model between 25 °C and 250 °C. Fast switching measurements were performed showing a VCE voltage fall-time of 22 ns and a VCE voltage rise-time of 11 ns.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
686-689
DOI
10.4028/www.scientific.net/MSF.679-680.686
Citation
M. Domeij, A. Lindgren, C. Zaring, A. O. Konstantinov, K. Gumaelius, H. Grenell, I. Keri, J. O. Svedberg, M. Reimark, "1200 V SiC BJTs with Low VCESAT and High Temperature Capability", Materials Science Forum, Vols. 679-680, pp. 686-689, 2011
Online since
March 2011
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