Paper Title:
Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density
  Abstract

The impacts of threading dislocations, surface defects, donor concentration, and schottky Schottky barrier height on the reverse IV characteristic of silicon carbide (SiC) junction barrier schottky Schottky (JBS) diodes were investigated. The 100 A JBS diodes were fabricated on 4H-SiC 3-inch N-type wafers with two types of threading dislocation density. The typical densities are were 0.2×104 and 3.8×104 cm-2, respectively. The improvement of vIt was found that variations in the leakage current and the high yield of large area JBS diodes werecould be were obtained improved by using a wafer with a low threading dislocation density. In the range of low leakage current, the investigation shows showed a correlation between leakage current and threading dislocation density.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
694-697
DOI
10.4028/www.scientific.net/MSF.679-680.694
Citation
F. Hirokazu, M. Konishi, T. Ohnishi, T. Nakamura, K. Hamada, T. Katsuno, Y. Watanabe, T. Endo, T. Yamamoto, K. Tsuruta, S. Onda, "Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density", Materials Science Forum, Vols. 679-680, pp. 694-697, 2011
Online since
March 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Kumiko Konishi, Norifumi Kameshiro, Natsuki Yokoyama, Akio Shima, Yasuhiro Shimamoto
Chapter IV: SiC Devices and Circuits
Abstract:We fabricated trench Junction Barrier Schottky (JBS) diodes, and investigated the effect on the reduction of leakage current and the device...
596
Authors: Koji Kamei, Ling Guo, Kenji Momose, Hitoshi Osawa
1.2 Epitaxial and Thin Films Growth
Abstract:We have investigated the “straight-line defect,” which has not been classified separately and is quite similar to the carrot defect. We found...
213