Paper Title:
Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation
  Abstract

We report the improvement of current gain in 4H-SiC bipolar junction transistors (BJTs) by using deposited oxides as a surface passivation layer. Various post-deposition annealing processes were investigated. We successfully demonstrated SiC BJTs with a high current gain (β) of 86 using deposited oxides annealed in NO. This is 70% higher current gain compared with that of BJTs with the same structure with conventional thermally-grown oxides.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
698-701
DOI
10.4028/www.scientific.net/MSF.679-680.698
Citation
H. Miyake, T. Kimoto, J. Suda, "Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation", Materials Science Forum, Vols. 679-680, pp. 698-701, 2011
Online since
March 2011
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$32.00
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