Paper Title:
Current Gain Degradation in 4H-SiC Power BJTs
  Abstract

SiC BJTs are very attractive for high power application, but long term stability is still problematic and it could prohibit commercial production of these devices. The aim of this paper is to investigate the current gain degradation in BJTs with no significant degradation of the on-resistance. Electrical measurements and simulations have been used to characterize the behavior of the BJT during the stress test. Current gain degradation occurs, the gain drops from 58 before stress to 43 after 40 hours, and, moreover, the knee current shows fluctuations in its value during the first 20 hours. Current gain degradation has been attributed to increased interface traps or reduced lifetime in the base-emitter region or small stacking faults in the base-emitter region, while fluctuations of the knee current might be due to stacking faults in the collector region.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
702-705
DOI
10.4028/www.scientific.net/MSF.679-680.702
Citation
B. Buono, R. Ghandi, M. Domeij, B. G. Malm, C. M. Zetterling, M. Östling, "Current Gain Degradation in 4H-SiC Power BJTs", Materials Science Forum, Vols. 679-680, pp. 702-705, 2011
Online since
March 2011
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Price
$32.00
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