Paper Title:
High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination
  Abstract

This paper reports our recent study on 4H-SiC power bipolar junction transistors (BJTs) with deep mesa edge termination. 1200 V – 10 A 4H-SiC power BJTs with an active area of 4.64 mm2 have been demonstrated using deep mesa for direct edge termination and device isolation. The BJT’s DC current gain () is about 37, and the specific on-resistance (RSP-ON) is ~ 3.0 m-cm2. The BJT fabrication is substantially simplified and an overall 10% reduction in the device area is achieved compared to the multi-step JTE-based SiC-BJTs.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
710-713
DOI
10.4028/www.scientific.net/MSF.679-680.710
Citation
J. H. Zhang, J. H. Zhao, X. H. Wang, X. Q. Li, L. Fursin, P. Alexandrov, M. A. Gagliardi, M. Lange, C. Dries, "High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination", Materials Science Forum, Vols. 679-680, pp. 710-713, 2011
Online since
March 2011
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Price
$32.00
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