Paper Title:
600V-30A 4H-SiC JBS and Si IGBT Hybrid Module
  Abstract

600V-30A 4H-SiC Junction Barrier Schottky(JBS)diodes were designed and fabricated using SiC epitaxy and device technology. SiC JBS diodes were packaged in Si IGBT module,and switching measurements were done at 125°C. As free-wheeling diode for Si IGBT, 600V SiC JBS diode was compared to 600V ultra-fast diode from International Rectifier. SiC diode achieved 90% recovery loss reduction and corresponding IGBT showed 30% lower turn-on loss. However, SiC JBS diode has larger on-state voltage drop due to small chip area. On-state power loss will be lowered by increasing SiC chip area.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
714-717
DOI
10.4028/www.scientific.net/MSF.679-680.714
Citation
Y. Z. Li, W. J. Ni, Z. Y. Li, Y. Li, C. Chen, X. J. Chen, "600V-30A 4H-SiC JBS and Si IGBT Hybrid Module", Materials Science Forum, Vols. 679-680, pp. 714-717, 2011
Online since
March 2011
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Price
$32.00
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