Paper Title:
High Temperature Silicon Carbide CMOS Integrated Circuits
  Abstract

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
726-729
DOI
10.4028/www.scientific.net/MSF.679-680.726
Citation
D. Clark, E. P. Ramsay, A.E. Murphy, D. A. Smith, R. F. Thompson, R.A.R. Young, J. D. Cormack, C. Zhu, S. Finney, J. Fletcher, "High Temperature Silicon Carbide CMOS Integrated Circuits", Materials Science Forum, Vols. 679-680, pp. 726-729, 2011
Online since
March 2011
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Price
$32.00
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