Paper Title:
300°C Silicon Carbide Integrated Circuits
  Abstract

MOSFET-based integrated circuits were fabricated on silicon carbide (SiC) substrates. SiC devices can operate at much higher temperatures than current semiconductor devices. Simple circuit components including operational amplifiers and common source amplifiers were fabricated and tested at room temperature and at 300°C. The common source amplifier displayed gain of 7.6 at room temperature and 6.8 at 300°C. The operational amplifier was tested for small signal open loop gain at 1kHz, measuring 60 dB at room temperature and 57 dB at 300°C. Stability testing was also performed at 300°C, showing very little drift at over 100 hours for the individual MOSFETs and the common source amplifier.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
730-733
DOI
10.4028/www.scientific.net/MSF.679-680.730
Citation
Z. Stum, V. Tilak, P. A. Losee, E. A. Andarawis, C. P. Chen, "300°C Silicon Carbide Integrated Circuits", Materials Science Forum, Vols. 679-680, pp. 730-733, 2011
Online since
March 2011
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Price
$32.00
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