Paper Title:
4H-SiC N-MOSFET Logic Circuits for High Temperature Operation
  Abstract

The suitability of normally-off 4H-SiC MOSFETs for high temperature operation in logic gates is investigated. Fowler-Nordheim analysis shows a lowering of the effective tunneling barrier height at elevated temperatures. Trap assisted tunneling induced by carbon interstitials is proposed as the responsible mechanism. Nevertheless, reliability of MOS devices even at 400°C is excellent with an extrapolated critical field of 2.69MV/cm for a 10 year time to dielectric breakdown. The switching behavior of logic gates is also characterized between 25°C and 400°C. Using these logic gates, a fully integrated edge triggered flip-flop is build and high temperature operation is demonstrated.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
734-737
DOI
10.4028/www.scientific.net/MSF.679-680.734
Citation
M. Le-Huu, M. Grieb, F. F. Schrey, H. Schmitt, V. Häublein, A. J. Bauer, H. Ryssel, L. Frey, "4H-SiC N-MOSFET Logic Circuits for High Temperature Operation", Materials Science Forum, Vols. 679-680, pp. 734-737, 2011
Online since
March 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Kevin Matocha, Richard Beaupre
Abstract:Thermal oxides on 4H-SiC are characterized using time-dependent dielectric breakdown techniques at electric fields between 6 and 10 MV/cm....
675
Authors: Bodgan Majkusiak, Andrzej Mazurak
Abstract:The paper discusses some issues of modeling the MOS tunnel structure with a gate stack containing a semiconductor quantum well (double...
77
Authors: Liang Chun Yu, Jody Fronheiser, Vinayak Tilak, Kin P. Cheung
Chapter 5: Processing of SiC
Abstract:The quality of the SiC/SiO2 interface is critical to the stability and performance of MOS-based SiC power devices. Charge pumping...
793
Authors: Li Jun Xu, He Ming Zhang, Hui Yong Hu, Xiao Bo Xu, Jian Li Ma
Chapter 24: Semiconductor Materials Manufacturing
Abstract:As the size of MOS device scaled down to sub 100nm, the direct tunneling current of gate oxide increases more and more. Using silicon nitride...
5442
Authors: Hong Hanh Nguyen, Ngoc Son Dang, Van Duy Nguyen, Kyungsoo Jang, Kyunghyun Baek, Woojin Choi, Jayapal Raja, Junsin Yi
V. Related Materials
Abstract:Nonvolatile memory (NVM) devices with nitride-nitride-oxynitride (NNO) stack structure using Si-rich silicon nitride (SiNx) as...
307