Paper Title:
An All Silicon Carbide High Temperature (450+ °C) High Voltage Gain AC Coupled Differential Amplifier
  Abstract

APEI, Inc. designed, fabricated and tested a high gain AC coupled differential amplifier based on a custom-built silicon carbide (SiC) vertical junction field effect transistor (VJFET). This SiC differential amplifier is capable of extreme temperature operation up to 450 °C, at which a high differential voltage gain of more than 47 dB is maintained. This high gain AC coupled differential amplifier can be integrated with high temperature sensors that deliver weak AC output signals to improve signal quality and noise immunity.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
746-749
DOI
10.4028/www.scientific.net/MSF.679-680.746
Citation
J. Yang, J. Fraley, B. Western, M. Schupbach, A. B. Lostetter, "An All Silicon Carbide High Temperature (450+ °C) High Voltage Gain AC Coupled Differential Amplifier", Materials Science Forum, Vols. 679-680, pp. 746-749, 2011
Online since
March 2011
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Price
$32.00
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