Paper Title:
Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications
  Abstract

This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible using SiC bipolar diodes. In a previous work, we have been demonstrated both theoretical and experimentally, the feasibility of SiC bandgap voltage reference using SiC Schottky diodes [1]. The present work completes the investigation on SiC bandgap reference by the using of SiC bipolar diodes. Simulated and experimental results for two different SiC devices: Schottky and bipolar diodes showed that the principles that govern the bandgap voltage references for Si are also valid for the SiC. A comparison between the output voltage levels of the two types of bandgap reference is also presented.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
754-757
DOI
10.4028/www.scientific.net/MSF.679-680.754
Citation
V. Banu, P. Godignon, X. Jordá, M. Alexandru, J. Millan, "Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications", Materials Science Forum, Vols. 679-680, pp. 754-757, 2011
Online since
March 2011
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Price
$32.00
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