Paper Title:
Measurements and Simulations of Lateral PNP Transistors in a SiC NPN BJT Technology for High Temperature Integrated Circuits
  Abstract

In this work, a 4H-SiC lateral PNP transistor fabricated in a high voltage NPN technology has been simulated and characterized. The possibility of fabricating a lateral PNP with a current gain larger than 1 has been investigated. Device and circuit level solutions have been performed.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
758-761
DOI
10.4028/www.scientific.net/MSF.679-680.758
Citation
L. Lanni, R. Ghandi, M. Domeij, C. M. Zetterling, B. G. Malm, M. Östling, "Measurements and Simulations of Lateral PNP Transistors in a SiC NPN BJT Technology for High Temperature Integrated Circuits", Materials Science Forum, Vols. 679-680, pp. 758-761, 2011
Online since
March 2011
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