Paper Title:
A Molded Package Optimized for High Voltage SiC-Devices
  Abstract

We present first results on power cycling of 6.5 kV SiC PiN-diodes mounted into a molded package. The geometry of this lateral package was designed to fulfill the specifications of the electrical isolation and the creepage distances in the high voltage region of 6.5 kV. To evaluate the suitability of this package we used high voltage SiC PiN-diodes. The diodes were soldered onto a copper lead frame, wire bonded and covered by molding compound. The packaged diodes were characterized by electrical measurements before and during a power cycling test with a temperature swing of 90 K. These results showed long term stable behavior of the I-V characteristics of the diodes as well as the suitability of the package for high temperature and high voltage application of SiC devices.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
762-765
DOI
10.4028/www.scientific.net/MSF.679-680.762
Citation
K. O. Dohnke, W. Bartsch, R. Schörner, T. Van Weelden, "A Molded Package Optimized for High Voltage SiC-Devices", Materials Science Forum, Vols. 679-680, pp. 762-765, 2011
Online since
March 2011
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Price
$32.00
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