Paper Title:
High Temperature Graphene Formation on Capped and Uncapped SiC
  Abstract

Epitaxial graphene was grown on Si-face 4H-SiC. A SiC pretreatment with a carbon cap¬ping technique was used as well as slow heating rates and a temperature of 1800 °C under atmos¬pheric argon pressure. The surface morphology was investigated by atomic force microscopy and Raman spectroscopy was performed for samples with different graphitization times.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
785-788
DOI
10.4028/www.scientific.net/MSF.679-680.785
Citation
R. Göckeritz, D. Schmidt, M. Beleites, G. Seifert, S. P. Krischok, M. Himmerlich, J. Pezoldt, "High Temperature Graphene Formation on Capped and Uncapped SiC", Materials Science Forum, Vols. 679-680, pp. 785-788, 2011
Online since
March 2011
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$32.00
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