Paper Title:
Analytical Model of Stress Relaxation in 3C SiC Layers on Silicon
  Abstract

In this work we analyze the static behavior of cantilevers elaborated on the basis of 3C SiC thin films grown by chemical vapor deposition on (100) and (111) oriented silicon substrates. A direct microscope observation of cantilever bending indicates the opposite sign of stress gradient (respectively negative and positive) for both film orientations. The correlation of this observation with the commonly admitted nature of intrinsic stress for each orientation (respectively compressive and tensile) leads us to an unexpected conclusion: instead of relaxing, the absolute value of the intrinsic stress increases from the interface to the layer surface. We propose an analytical model that could explain this phenomenon.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
79-82
DOI
10.4028/www.scientific.net/MSF.679-680.79
Citation
M. Zielinski, J. F. Michaud, S. Jiao, T. Chassagne, A. E. Bazin, A. Michon, M. Portail, D. Alquier, "Analytical Model of Stress Relaxation in 3C SiC Layers on Silicon", Materials Science Forum, Vols. 679-680, pp. 79-82, 2011
Online since
March 2011
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Price
$32.00
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