Paper Title:
Influence of Intercalated Silicon on the Transport Properties of Graphene
  Abstract

Epitaxial graphene produced from SiC substrates exhibits a carrier mobility re- duction thought to arise from intercalated silicon. We present the results of density functional simulations and show that individual silicon atoms are highly mobile on and between graphene sheets, suggesting that thermally stable structures involving individual Si impurities are likely to result from the interaction of silicon with defects in the graphene sheets.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
793-796
DOI
10.4028/www.scientific.net/MSF.679-680.793
Citation
J. P. Goss, P. R. Briddon, V. K. Nagareddy, N. G. Wright, A. B. Horsfall, J. D. Caldwell, D. K. Gaskill, G. G. Jernigan, "Influence of Intercalated Silicon on the Transport Properties of Graphene", Materials Science Forum, Vols. 679-680, pp. 793-796, 2011
Online since
March 2011
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