Paper Title:
Temperature Dependent Structural Evolution of Graphene Layers on 4H-SiC(0001)
  Abstract

In this study we examined the structural evolution of graphene grown on 8° off-axis 4H-SiC(0001) substrates at temperatures from 1600°C to 1700°C in Ar ambient. Morphological transformation of SiC substrate after annealing was examined by Tapping Mode Atomic Force Microscopy. Moreover, by etching-out graphene layers from graphitized SiC substrates in selective trenches we determined the number of graphene layers. Numbers of graphene layers were then independently confirmed by Transmission Electron Microscopy imaging.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
797-800
DOI
10.4028/www.scientific.net/MSF.679-680.797
Citation
S. Sonde, C. Vecchio, F. Giannazzo, C. Bongiorno, S. Di Franco, M. Rambach, E. Rimini, V. Raineri, "Temperature Dependent Structural Evolution of Graphene Layers on 4H-SiC(0001)", Materials Science Forum, Vols. 679-680, pp. 797-800, 2011
Online since
March 2011
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