Paper Title:
Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal
  Abstract

We investigated a way of reducing the stacking fault (SF) density on a highly nitrogen (N) doped 4H-SiC crystal. SFs were generated at highly N doped crystal exceeding 4 x 1019 cm-3 and the density was increased with increasing N concentration. We found that Al co-doping had the potential to suppress this SF generation and was effective up to an N concentration of about 1 x 1021cm-3. This effect depended strongly on the Al concentration. We discussed the reason for the SF suppression effect of Al co-doping.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
8-11
DOI
10.4028/www.scientific.net/MSF.679-680.8
Citation
K. Kojima, T. Kato, S. Ito, J. Kojima, F. Hirose, Y. Kito, S. Yamauchi, K. Nishikawa, A. Adachi, "Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal", Materials Science Forum, Vols. 679-680, pp. 8-11, 2011
Online since
March 2011
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Price
$32.00
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