Paper Title:
InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate
  Abstract

Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
801-803
DOI
10.4028/www.scientific.net/MSF.679-680.801
Citation
J. S. Han, S. Dimitrjiev, L. Wang, A. Iacopi, Q. Shuang, X. G. Xu, "InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate", Materials Science Forum, Vols. 679-680, pp. 801-803, 2011
Online since
March 2011
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$32.00
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