Paper Title:
Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation
  Abstract

Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation induced defects in GaN. Two of the implantation induced defects, E1 and E2, with DLTS peaks in the 100 – 200 K temperature range, had DLTS signals that could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and 0.27 eV below the conduction band, respectively, are two configurations of a metastable defect. These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias and temperature conditions, and the transformation processes follow first order kinetics.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
804-807
DOI
10.4028/www.scientific.net/MSF.679-680.804
Citation
F. D. Auret, W. E. Meyer, M. Diale, P.J. Janse Van Rensburg, S.F. Song, K. Temst, A. Vantomme, "Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation", Materials Science Forum, Vols. 679-680, pp. 804-807, 2011
Online since
March 2011
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