Paper Title:
Ohmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices T
  Abstract

The temperature dependence of Ohmic contacts to GaN devices is investigated in this paper via by measuring TLM contact resistances TLM vs Tas a function of temperature. measurements. In particular, the two types of Ohmic contacts are considered: (1) Contacts to highly doped implanted regions (such as the MOSFET drain/source contacts or the back contact of Schottky diodes) and (2) contacts to the 2 dimensional electron gas (2DEG) of an AlGaN/GaN heterojunction.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
816-819
DOI
10.4028/www.scientific.net/MSF.679-680.816
Citation
A. Pérez-Tomás, A. Fontserè, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P. M. Gammon, M. R. Jennings, "Ohmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices T", Materials Science Forum, Vols. 679-680, pp. 816-819, 2011
Online since
March 2011
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$32.00
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