Paper Title:
Characterization of Fast Switching Capability for Diamond Schottky Barrier Diode
  Abstract

Wide band gap semiconductors have been attracted as the material for fabricating power switching devices to obtain lower power conversion loss in high voltage circuit, and to operate harsh environment of high temperature. This paper focuses on diamond as the wide band gap semiconductor material and elucidates the dynamic characteristics in switching operation. To this end, Schottky barrier diode (SBD) is fabricated with p type diamond semiconductor and static I-V characteristics is evaluated. Then, the switching operation of diamond SBD is demonstrated, and forward current dependency of the recovery phenomena is characterized. The diamond SBDs show superior fast switching capability with low reverse recovery current, which is inherent in uni-polar switching device.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
820-823
DOI
10.4028/www.scientific.net/MSF.679-680.820
Citation
T. Funaki, K. Kodama, H. Umezawa, S. Shikata, "Characterization of Fast Switching Capability for Diamond Schottky Barrier Diode", Materials Science Forum, Vols. 679-680, pp. 820-823, 2011
Online since
March 2011
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$32.00
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