Paper Title:
Structural Investigations of a Sputtered Intermediate Carbonization Layer for 3C-SiC on (111) and (110) Si Substrates
  Abstract

Thin SiC buffer layers have been grown by sputtering a graphite C target onto both (111) and (110) Si substrates. Converting the graphitic C into SiC is highly temperature dependent and relies on free silicon atoms that sublime from voids in the substrate at higher temperatures. Morphological and structural investigations were performed by Field Emission Scanning Electron Microscopy (FESEM) and X-ray Diffraction (XRD).

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
83-86
DOI
10.4028/www.scientific.net/MSF.679-680.83
Citation
J. Huguenin-Love, R. J. Soukup, N. J. Ianno, N. T. Lauer, "Structural Investigations of a Sputtered Intermediate Carbonization Layer for 3C-SiC on (111) and (110) Si Substrates", Materials Science Forum, Vols. 679-680, pp. 83-86, 2011
Online since
March 2011
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