Paper Title:
Polarity Control of CVD Grown 3C-SiC on Si(111)
  Abstract

XPD and XRD measurements revealed a difference in the crystallographic polarity of 3C-SiC(111) grown on Si(111) carbonized by ethene diluted in hydrogen at atmospheric pressure in a rapid thermal chemical vapour deposition reactor and the crystallographic polarity of 3C-SiC(111) formed in an ethene hydrogen gas mixture at low pressures. In the first case C-face polar material was formed, whereas in the second case the grown expitaxial layer exhibits Si-face surface polarity.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
91-94
DOI
10.4028/www.scientific.net/MSF.679-680.91
Citation
J. Pezoldt, B. Schröter, "Polarity Control of CVD Grown 3C-SiC on Si(111)", Materials Science Forum, Vols. 679-680, pp. 91-94, 2011
Online since
March 2011
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Price
$35.00
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