Paper Title:
Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates – Defects Analysis and Reduction
  Abstract

A good selection of growth parameters (in-situ etching, C/Si ratio, growth rate) enables obtaining of ~1nm high steps of epitaxial layers, which are comparable to the size of an elementary cell (8°off-axis) and achieve the density of BPD=8•103/cm2. Due to crystallization on substrates with low misorientation (<2°off-axis) it is possible to obtain epitaxial layers substantially lacking in BPD dislocations. However, a slightly more developed surface with Ra=1-2.5nm (1.25°, 2°off-axis) characterizes these layers. By lowering the C/Si ratio, morphology of layers crystallized on substrates with low misorientation was improved. Extending growth rate improved both the crystallographic quality of the grown layers and their polytype stability. Nevertheless, growth without BPDs, also referred to as the homogeneous (4H) polytypic growth on 4H-SiC on-axis substrates, is the most efficient way of defect elimination.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
95-98
DOI
10.4028/www.scientific.net/MSF.679-680.95
Citation
K. Kościewicz, W. Strupiński, D. Teklinska, K. Mazur, M. Tokarczyk, G. Kowalski, A. R. Olszyna, "Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates – Defects Analysis and Reduction", Materials Science Forum, Vols. 679-680, pp. 95-98, 2011
Online since
March 2011
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Authors: Yong Qiang Sun, Gan Feng, Jun Yong Kang, Wei Ning Qian, Li Ping Lv, Yi Yang Li, Kai Xi Li, Jian H. Zhao
1.2 Epitaxial and Thin Films Growth
Abstract:The large growth pits (LGPs) dependence of substrate quality, growth rate, and C/Si ratio have been discussed in the 4H-SiC epitaxial growth...
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