In this work, the growth by Vapour-Liquid-Solid (VLS) mechanism of 3C-SiC on silicon substrate is reported. Firstly, a germanium layer is deposited on the substrate. Then the temperature of the sample is increased above Ge melting point in order to form a SiGe liquid phase by reaction with the substrate. Upon reaching the target temperature (1100-1300°C) the VLS growth starts with the injection of propane in the reactor. Both Raman spectrometry and X-Ray diffraction analyses evidenced the formation of 3C-SiC on every sample. However, this SiC deposit, a few micrometers thick, is always found to be polycrystalline though textured. In parallel, the presence of an epitaxial Si-Ge alloy, whose composition depends on the growth temperature, was systematically detected between Si and SiC.