Paper Title:
Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport
  Abstract

In this work, the growth by Vapour-Liquid-Solid (VLS) mechanism of 3C-SiC on silicon substrate is reported. Firstly, a germanium layer is deposited on the substrate. Then the temperature of the sample is increased above Ge melting point in order to form a SiGe liquid phase by reaction with the substrate. Upon reaching the target temperature (1100-1300°C) the VLS growth starts with the injection of propane in the reactor. Both Raman spectrometry and X-Ray diffraction analyses evidenced the formation of 3C-SiC on every sample. However, this SiC deposit, a few micrometers thick, is always found to be polycrystalline though textured. In parallel, the presence of an epitaxial Si-Ge alloy, whose composition depends on the growth temperature, was systematically detected between Si and SiC.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
99-102
DOI
10.4028/www.scientific.net/MSF.679-680.99
Citation
S. Berckmans, L. Auvray, G. Ferro, F. Cauwet, D. Carole, V. Soulière, J. C. Viala, E. Collard, J. B. Quoirin, C. Brylinski, "Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport", Materials Science Forum, Vols. 679-680, pp. 99-102, 2011
Online since
March 2011
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$32.00
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