Paper Title
Authors: Tomohisa Kato, Tomonori Miura, Ichiro Nagai, Hiroyoshi Taniguchi, Hideaki Kawashima, Tetsuya Ozawa, Kazuo Arai, Hajime Okumura
Abstract:In this study, we suggest the effective enlargement method of (0001) 4H-SiC bulk crystals grown by the sublimation method using long length...
Authors: Kazutoshi Kojima, Tomohisa Kato, Sachiko Ito, Jun Kojima, Fusao Hirose, Yasuo Kito, Shoichi Yamauchi, Koichi Nishikawa, Ayumu Adachi
Abstract:We investigated a way of reducing the stacking fault (SF) density on a highly nitrogen (N) doped 4H-SiC crystal. SFs were generated at highly...
Authors: Alexander A. Lebedev, Pavel L. Abramov, A.S. Zubrilov, Elena V. Bogdanova, Sergey P. Lebedev, Natasha V. Seredova, Alla S. Tregubova
Abstract:It is demonstrated that polytype-homogeneous, thick (>100 m) epitaxial 3C-SiC layers of good quality with diameters of no less than 25 mm...
Authors: Krzysztof Grasza, Emil Tymicki, Katarzyna Racka, Marek Orzyłowski
Abstract:A set of single crystal growth experiments was performed in the new resistively heated two-heater furnace, which plays the role of an...
Authors: Irina G. Galben-Sandulache, Maya Marinova, Alkyoni Mantzari, Guoli L. Sun, Ariadne Andreadou, Didier Chaussende, Efstathios K. Polychroniadis
Abstract:This work presents the crystalline quality investigation of 3C-SiC unseeded crystals grown from vapor phase. Samples were polished after...
Authors: Alexander, Kazuaki Seki, Shigeta Kozawa, Yuji Yamamoto, Toru Ujihara, Yoshikazu Takeda
Abstract:We investigated the polytype transition process from 4H-SiC to 6H-SiC during solution growth from the viewpoint of growth mode. The polarity...
Authors: Shigeta Kozawa, Kazuaki Seki, Alexander, Yuji Yamamoto, Toru Ujihara, Yoshikazu Takeda
Abstract:We investigated dislocation behavior in the crystal grown on 6H-SiC (0001) by solution method using synchrotron X-ray topography and thermal...
Authors: Frédéric Mercier, Shin Ichi Nishizawa
Abstract:We investigated numerically fluid dynamics and carbon transport in a 2 inches SiC solution growth with the presence of alternative magnetic...
Authors: Kazuhiko Kusunoki, Kazuhito Kamei, Nobuyoshi Yashiro, Koji Moriguchi, Nobuhiro Okada
Abstract:We attempted the traveling solvent method (TSM) growth of SiC on 6H-SiC(0001) substrates using Si and Si-M (M=Ti, Cr and Dy) solvents at...
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