Paper Title
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Authors: Giorgio Lulli, Roberta Nipoti
Abstract:In this work under-mask penetration of Al+ ions implanted in 4H-SiC is investigated by computer simulation based on the Monte-Carlo binary...
421
Authors: Shinya Kotake, Hiroshi Yano, Dai Okamoto, Tomoaki Hatayama, Takashi Fuyuki
Abstract:Metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) were fabricated on C-face 4H-SiC with post-oxidation...
425
Authors: Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
Abstract:To understand the structure of SiC–oxide interface more in detail, we propose a profiling theory of Si and C emission into SiC layer during...
429
Authors: Jean Lorenzzi, Romain Esteve, Nikoletta Jegenyes, Sergey A. Reshanov, Adolf Schöner, Gabriel Ferro
Abstract:In this work we report on the growth and preparation of 3C-SiC(111) material for metal-oxide-semiconductor (MOS) application. In order to...
433
Authors: Sergey P. Lebedev, V.N. Petrov, I.S. Kotousova, A.A. Lavrent’ev, P.A. Dement’ev, Alexander A. Lebedev, Alexander N. Titkov
Abstract:Influence of high-vacuum annealing at temperatures in the range 1300-1400°C and residual pressure of ~10-6 Torr on the surface of 6H-SiC...
437
Authors: Muhammad Usman, T. Pilvi, Markku Leskelä, Adolf Schöner, Anders Hallén
Abstract:Aluminum-based high-k dielectric materials have been studied for their potential use as passivation for SiC devices....
441
Authors: Muneharu Kato, Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto
Abstract:Post-oxidation annealing (POA) in Ar at high temperature has been performed during fabrication of 4H-SiC metal-oxide-semiconductor...
445
Authors: Walter Daves, A. Krauss, Martin Le-Huu, S. Kronmüller, Volker Häublein, Anton J. Bauer, Lothar Frey
Abstract:We investigated the performance of different metallization/passivation systems for high temperature applications. The metallizations...
449
Authors: Denis Perrone, Sergio Ferrero, Luciano Scaltrito, Marco Naretto, Edvige Celasco, C. Fabrizio Pirri
Abstract:In this work we studied different Schottky contacts to 4H-SiC with the aim to obtain Schottky Barrier diodes (SBDs) and Junction Barrier...
453
Authors: Gontran Pâques, Nicolas Dheilly, Dominique Planson, Rik W. De Doncker, Sigo Scharnholz
Abstract:In this paper, we propose a graded etched junction termination extension for SiC thyristors. It has the functionality of a multiple implanted...
457
Showing 101 to 110 of 200 Paper Titles