Paper Title
Page
Authors: Aurore Constant, Nicolas Camara, Josep Montserrat, Esther Pausas, Jean Camassel, Phillippe Godignon
Abstract:Rapid Thermal Processing (RTP) has been evaluated as an alternative to the conventional furnace process for the gate oxide formation of SiC...
500
Authors: Roberta Nipoti, Fulvio Mancarella, Francesco Moscatelli, R. Rizzoli, S. Zampolli
Abstract:In this study a pyrolyzed photoresist film that has been used for protecting the implanted surface of a 4H-SiC wafer during post implantation...
504
Authors: Bernard Enrico Watts, Giovanni Attolini, Francesca Rossi, Matteo Bosi, Giancarlo Salviati, Fulvio Mancarella, Matteo Ferri, Alberto Roncaglia, Antonella Poggi
Abstract:Cubic silicon carbide nanowires (-SiC or 3C-SiC NW) have been grown by Vapour Phase Epitaxy on (001) silicon substrates patterned by...
508
Authors: Maelig Ollivier, Arnaud Mantoux, Edwige Bano, Konstantinos Rogdakis, Konstantinos Zekentes, Thierry Baron, Laurence Latu-Romain
Abstract:Silicon microwires (MWs) previously synthesized using the VLS method with gold catalyst are being carburized at 1100°C under methane aiming...
512
Authors: Marton Vörös, Peter Deák, Thomas Frauenheim, Adam Gali
Abstract:The electronic structure and absorption spectrum of hydrogenated silicon carbide nanocrystals (SiC NC) have been determined by first...
516
Authors: Marton Vörös, Peter Deák, Thomas Frauenheim, Adam Gali
Abstract:We have investigated the absorption of 0.9, 1.4 nm silicon carbide nanoparticles (SiC NPs) by time-dependent density functional calculations,...
520
Authors: Masaki Goto, Akira Koga, Kazuhiro Yamada, Yoshimine Kato, Kungen Teii
Abstract:Nanocrystalline diamond (NCD)/3C-SiC layered films are deposited on Si substrates by using a moderate-pressure microwave plasma apparatus....
524
Authors: Dethard Peters, Bernd Thomas, T. Duetemeyer, T. Hunger, R. Sommer
Abstract:The paper describes first results of 6.5 kV SiC PiN diode modules which are designed as neutral point valves for medium-voltage power...
531
Authors: Koji Nakayama, Ryosuke Ishii, Katsunori Asano, Tetsuya Miyazawa, Masahiko Ito, Hidekazu Tsuchida
Abstract:Forward voltage drops of carbon implanted and thermal oxidized pin diode with thick drift layer are investigated to evaluate the effect on...
535
Authors: Michael E. Levinshtein, Pavel A. Ivanov, John W. Palmour, Anant K. Agarwal, Mrinal K. Das
Abstract:We report on specific features of forward voltage degradation of 4H-SiC p-i-n diodes in the pulse mode. It is shown that pulse stresses with...
539
Showing 121 to 130 of 200 Paper Titles