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Authors: Yoshihiro Ueoka, Hiroshi Yano, Dai Okamoto, Tomoaki Hatayama, Takashi Fuyuki
Abstract:We investigated electrical properties of 4H-SiC trench metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated on (000_,1)...
666
Authors: Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, Nicolas G. Wright, Andrew J. Smith, C. Mark Johnson
Abstract:Trenched implanted vertical JFETs (TI-VJFETs) with self-aligned gate and source contacts were fabricated on commercial 4H-SiC epitaxial...
670
Authors: Peter M. Gammon, Amador Pérez-Tomás, Michael R. Jennings, Owen J. Guy, N. Rimmer, J. Llobet, Narcis Mestres, Phillippe Godignon, Marcel Placidi, M. Zabala, James A. Covington, Philip A. Mawby
Abstract:In this paper, the integration of HfO2 onto SiC has been investigated via a number of different test structures. Capacitors consisting of...
674
Authors: Harsh Naik, T. Paul Chow
Abstract:The effect of using two different polytypes, 4H-SiC and 6H-SiC, on the performance of (0001) SiC MOSFETs has been studied. 4H-SiC and 6H-SiC...
678
Authors: Sigo Scharnholz, Bertrand Vergne, Jens Peter Konrath, Gontran Pâques, Volker Zorngiebel
Abstract:With a focus on pulsed power applications, this paper presents results of the pulse current characterization of GTO thyristors developed and...
682
Authors: Martin Domeij, Anders Lindgren, Carina Zaring, Andrei O. Konstantinov, Krister Gumaelius, Hakan Grenell, Imre Keri, Jan Olov Svedberg, Mats Reimark
Abstract:Vertical epitaxial NPN SiC BJTs for 1200 V rating were fabricated. Very low collector-emitter saturation voltages VCESAT=0.5 V at IC=6 A...
686
Authors: Nicolas Dheilly, Gontran Pâques, Dominique Planson, Pascal Bevilacqua, Sigo Scharnholz
Abstract:Direct light triggering of 4H-SiC thyristors with a 365 nm UV LED was demonstrated. Two different structures with etched and non etched gate...
690
Authors: Fujiwara Hirokazu, Masaki Konishi, T. Ohnishi, T. Nakamura, Kimimori Hamada, T. Katsuno, Y. Watanabe, Takeshi Endo, Takeo Yamamoto, K. Tsuruta, Shoichi Onda
Abstract:The impacts of threading dislocations, surface defects, donor concentration, and schottky Schottky barrier height on the reverse IV...
694
Authors: Hiroki Miyake, Tsunenobu Kimoto, Jun Suda
Abstract:We report the improvement of current gain in 4H-SiC bipolar junction transistors (BJTs) by using deposited oxides as a surface passivation...
698
Authors: Benedetto Buono, Reza Ghandi, Martin Domeij, Bengt Gunnar Malm, Carl Mikael Zetterling, Mikael Östling
Abstract:SiC BJTs are very attractive for high power application, but long term stability is still problematic and it could prohibit commercial...
702
Showing 161 to 170 of 200 Paper Titles