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Authors: Reza Ghandi, Benedetto Buono, Martin Domeij, Carl Mikael Zetterling, Mikael Östling
Abstract:In this work, implantation-free 4H-SiC bipolar transistors with two-zone etched-JTE and improved surface passivation are fabricated. This...
706
Authors: Jian Hui Zhang, Jian H. Zhao, Xiao Hui Wang, Xue Qing Li, Leonid Fursin, Petre Alexandrov, Mari Anne Gagliardi, Mike Lange, Christopher Dries
Abstract:This paper reports our recent study on 4H-SiC power bipolar junction transistors (BJTs) with deep mesa edge termination. 1200 V – 10 A 4H-SiC...
710
Authors: Yu Zhu Li, Wei Jiang Ni, Zhe Yang Li, Yun Li, Chen Chen, Xiao Jian Chen
Abstract:600V-30A 4H-SiC Junction Barrier Schottky(JBS)diodes were designed and fabricated using SiC epitaxy and device technology. SiC JBS diodes...
714
Authors: Katsunori Asano, Koji Nakayama, Yoichi Miyanagi, Atsushi Tanaka, Masahiko Nishimura, Toru Izumi, Shuuji Ogata, Toshihiko Hayashi
Abstract:The measured turn-off waveforms of 4.5 kV SiCGTs by using electron irradiation with various electron doses are reported. The turn-off time...
718
Authors: Georg Tolstoy, Dimosthenis Peftitsis, Jacek Rabkowski, Hans Peter Nee
Abstract:A 4.1x4.1mm2, 100mΩ 1,2kV lateral channel vertical junction field effect transistor (LCVJFET) built in silicon carbide (SiC) from SiCED, to...
722
Authors: David Clark, Ewan P. Ramsay, A.E. Murphy, Dave A. Smith, Robin. F. Thompson, R.A.R. Young, Jennifer D. Cormack, C. Zhu, S. Finney, John Fletcher
Abstract:The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating...
726
Authors: Zachary Stum, Vinayak Tilak, Peter A. Losee, Emad A. Andarawis, Cheng Po Chen
Abstract:MOSFET-based integrated circuits were fabricated on silicon carbide (SiC) substrates. SiC devices can operate at much higher temperatures...
730
Authors: Martin Le-Huu, Michael Grieb, Frederik F. Schrey, H. Schmitt, Volker Häublein, Anton J. Bauer, Heiner Ryssel, Lothar Frey
Abstract:The suitability of normally-off 4H-SiC MOSFETs for high temperature operation in logic gates is investigated. Fowler-Nordheim analysis shows...
734
  | Authors: Shinji Sato, Kohei Matsui, Yusuke Zushi, Yoshinori Murakami, Satoshi Tanimoto, Hiroshi Sato, Hiroshi Yamaguchi
Abstract:A forced-air-cooled three-phase inverter built with SiC-JFETs and -SBDs as power semi-conductor devices was designed and fabricated. The...
738
Authors: Rolf Gerlach, Roland Rupp, Peter Türkes, Ralf Otremba
Abstract:In this paper we compare the thermal behavior of identical SiC Schottky diodes mounted in i) a standard TO220 package (TO220) with...
742
Showing 171 to 180 of 200 Paper Titles