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Authors: Im Gyu Yeo, Tae Woo Lee, Jong Hwi Park, Woo Sung Yang, Heui Bum Ryu, Mi Seon Park, Il Soo Kim, Byoung Chul Shin, Won Jae Lee, Tai Hee Eun, Seung Seok Lee, Myong Chuel Chun
Abstract:Extensive study of various process parameters to influence on the growth of 4H-SiC crystal has been carried out using the transformation of...
40
Authors: Im Gyu Yeo, Tae Woo Lee, Jong Hwi Park, Woo Sung Yang, Heui Bum Ryu, Mi Seon Park, Il Soo Kim, Byoung Chul Shin, Won Jae Lee, Tai Hee Eun, Seung Seok Lee, Myong Chuel Chun
Abstract:The single crystal ingots by using a sublimation technique were grown on 6H-SiC dual-seed crystals with opposite face polarities and then SiC...
44
Authors: Massimo Camarda, Antonino La Magna, Francesco La Via
Abstract:Three dimensional kinetic Monte Carlo simulations on super-lattices are applied to study the evolution of stacking faults during epitaxial...
48
Authors: Birgit Kallinger, Bernd Thomas, Patrick Berwian, Jochen Friedrich, Gerd Trachta, Arnd Dietrich Weber
Abstract:Homoepitaxial growth on 4° off-axis substrates with different off-cut directions, i.e. [11-20] and [1-100], was investigated using a...
55
Authors: Stefano Leone, Yuan Chih Lin, Franziska Christine Beyer, Sven Andersson, Henrik Pedersen, Olof Kordina, Anne Henry, Erik Janzén
Abstract:The epitaxial growth at 100 µm/h on on-axis 4H-SiC substrates is demonstrated in this study. Chloride-based CVD, which has been shown to be a...
59
Authors: Virginia D. Wheeler, Brenda L. VanMil, Rachael L. Myers-Ward, S. Chung, Yoosuf N. Picard, Marek Skowronski, Robert E. Stahlbush, Nadeemullah A. Mahadik, Charles R. Eddy, D. Kurt Gaskill
Abstract:The effectiveness of an in-situ growth interrupt in nitrogen doped 8° off-cut epilayers was investigated using ultraviolet photoluminescence...
63
Authors: Andrea Canino, Massimo Camarda, Francesco La Via
Abstract:Spatially resolved micro-photoluminescence has been used to study the Single Shockley faults surface density and properties on 4H-SiC...
67
Authors: Gabriel Ferro, Olivier Kim-Hak, Jean Lorenzzi, Nikoletta Jegenyes, Maya Marinova, Maher Soueidan, Davy Carole, Efstathios K. Polychroniadis
Abstract:This paper deals with the formation and propagation of twin boundaries (TBs) inside 3C-SiC layers grown heteroepitaxially on -SiC substrate....
71
Authors: Anne Henry, Stefano Leone, Franziska Christine Beyer, Sven Andersson, Olof Kordina, Erik Janzén
Abstract:A chloride-based chemical-vapor-deposition (CVD) process has been successfully used to grow very high quality 3C-SiC epitaxial layers on...
75
Authors: Marcin Zielinski, Jean François Michaud, S. Jiao, Thierry Chassagne, Anne Elisabeth Bazin, A. Michon, Marc Portail, Daniel Alquier
Abstract:In this work we analyze the static behavior of cantilevers elaborated on the basis of 3C SiC thin films grown by chemical vapor deposition on...
79
Showing 11 to 20 of 200 Paper Titles