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Authors: James Huguenin-Love, Rodney J. Soukup, Ned J. Ianno, Noel T. Lauer
Abstract:Thin SiC buffer layers have been grown by sputtering a graphite C target onto both (111) and (110) Si substrates. Converting the graphitic C...
83
Authors: Makoto Itoh, Tsuyoshi Uda, Jun Nara, Takahisa Ohno
Abstract:We developed the computer simulation method to study growth of SiC at the SiC(0001)/Si1-xCx interface based on the Monte Carlo method. Energy...
87
Authors: Jörg Pezoldt, Bernd Schröter
Abstract:XPD and XRD measurements revealed a difference in the crystallographic polarity of 3C-SiC(111) grown on Si(111) carbonized by ethene diluted...
91
Authors: Kinga Kościewicz, Wlodek Strupiński, Dominika Teklinska, Krystyna Mazur, Mateusz Tokarczyk, Grzegorz Kowalski, Andrzej Roman Olszyna
Abstract:A good selection of growth parameters (in-situ etching, C/Si ratio, growth rate) enables obtaining of ~1nm high steps of epitaxial layers,...
95
Authors: Stéphane Berckmans, Laurent Auvray, Gabriel Ferro, François Cauwet, Davy Carole, Veronique Soulière, Jean Claude Viala, Emmanuel Collard, Jean Baptiste Quoirin, Christian Brylinski
Abstract:In this work, the growth by Vapour-Liquid-Solid (VLS) mechanism of 3C-SiC on silicon substrate is reported. Firstly, a germanium layer is...
99
Authors: Valdas Jokubavicius, Rickard Liljedahl, Yi Yu Ou, Hai Yan Ou, Satoshi Kamiyama, Rositza Yakimova, Mikael Syväjärvi
Abstract:Growth of 3C or 6H-SiC epilayers on low off-axis 6H-SiC substrates can be mastered by changing the size of the on axis plane formed by long...
103
Authors: Tae Woo Lee, Im Gyu Yeo, Byoung Chul Shin, Won Jae Lee, Mi Seon Park, Hyun Hee Hwang, Shigehiro Nishino
Abstract:We adopted HMDS(Hexamethyledisilane) as a SiC(Silicon carbide) source material for epitaxial growth of 3C-SiC on Si substrate. Various growth...
107
Authors: Jean Lorenzzi, Nikoletta Jegenyes, Mihai Lazar, Dominique Tournier, François Cauwet, Davy Carole, Gabriel Ferro
Abstract:In this work we report on 3C-SiC heteroepitaxial growth on 4H-SiC(0001) substrates which were patterned to form mesa structures. Two...
111
Authors: Jawad ul Hassan, Peder Bergman, Anne Henry, Erik Janzén
Abstract:The effect of different C/Si ratio on the surface morphology has been studied to optimize the on-axis homoepitaxial growth conditions on...
115
Authors: Rachael L. Myers-Ward, Luke O. Nyakiti, Jennifer K. Hite, Orest J. Glembocki, Francisco J. Bezares, Joshua D. Caldwell, Eugene A. Imhoff, Karl D. Hobart, James C. Culbertson, Yoosuf N. Picard, Virginia D. Wheeler, Charles R. Eddy, D. Kurt Gaskill
Abstract:Homo- and heteroepitaxial 3C-SiC layers were grown on 4H-SiC step-free mesas. The yields of smooth, defect-free mesas were ~ 17% for both...
119
Showing 21 to 30 of 200 Paper Titles