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Silicon Carbide and Related Materials 2010

Volumes 679 - 680
doi: 10.4028/www.scientific.net/MSF.679-680
Paper Titles published in this Main Theme:
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4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer

Authors: Gil Yong Chung, Mark J. Loboda, Jie Zhang, Jian Wei Wan, E.P. Carlson, T.J. Toth, Robert E. Stahlbush, Marek Skowronski, R. Berechman, Siddarth G. Sundaresan, Ranbir Singh

123

Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy

Authors: Philip Hens, J. Müller, L. Fahlbusch, E. Spiecker, Peter Wellmann

127

Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application

Authors: Ruggero Anzalone, Massimo Camarda, Giuseppe D'Arrigo, Christopher Locke, Andrea Canino, Nicolò Piluso, Andrea Severino, Antonino La Magna, Stephen E. Saddow, Francesco La Via

133

Evaluation of Curvature and Stress in 3C-SiC Grown on Differently Oriented Si Substrates

Authors: Bernard Enrico Watts, Giovanni Attolini, Tullo Besagni, Matteo Bosi, Claudio Ferrari, Francesca Rossi, Ferenc Riesz, Liu Di Jiang

137

Raman Stress Characterization of Hetero-Epitaxial 3C-SiC Free Standing Structures

Authors: Nicolò Piluso, Massimo Camarda, Ruggero Anzalone, Andrea Severino, Antonino La Magna, Giuseppe D'Arrigo, Francesco La Via

141

A Comparative Study of the Morphologies of Etch Pits in Semi-Insulating Silicon Carbide Single Crystals

Authors: Yan Peng, Xian Gang Xua, Xiao Bo Hu, Xiu Fang Chen, Yu Qiang Gao

145

Nondestructive Evaluation of Photo-Electrical Properties of 3C-SiC (111) Homoepitaxial Layers Grown by CVD

Authors: Nikoletta Jegenyes, Georgios Manolis, Jean Lorenzzi, Veronique Soulière, Deborah Dompoint, Alexandre Boulle, Gabriel Ferro, Kestutis Jarašiūnas

153

Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques

Authors: Patrik Ščajev, A. Mekys, P. Malinovskis, Jurgis Storasta, Masashi Kato, Kestutis Jarašiūnas

157

Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers

Authors: Georgios Manolis, Milena Beshkova, Mikael Syväjärvi, Rositza Yakimova, Kestutis Jarašiūnas

161

Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts

Authors: Maya Marinova, Alkyoni Mantzari, Jian Wu Sun, Jean Lorenzzi, Ariadne Andreadou, Georgios Zoulis, Sandrine Juillaguet, Gabriel Ferro, Jean Camassel, Efstathios K. Polychroniadis

165

Showing 31 to 40 of 200 Paper Titles
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