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Authors: Georgios Zoulis, Jian Wu Sun, Irina G. Galben-Sandulache, Guoli L. Sun, Sandrine Juillaguet, Thierry Ouisse, Didier Chaussende, Roland Madar, Jean Camassel
Abstract:We present the results of an optical investigation performed using low temperature photomuminescence and Raman spectroscopy on bulk 3C-SiC...
169
Authors: John W. Steeds
Abstract:In the course of studying by low temperature photoluminescence spectroscopy a wide range of electron-irradiated samples of p(Al)-type...
173
Authors: Alexander M. Ivanov, Nikita B. Strokan, N.A. Scherbov, Alexander A. Lebedev
Abstract:Non-uniformities of electrical properties of 4H-SiC CVD films have been revealed using physico-chemical reactions occurring upon introduction...
177
Authors: Hideharu Matsuura, Hideki Yanagisawa, Kozo Nishino, Takunori Nojiri, Shinobu Onoda, Takeshi Ohshima
Abstract:The mechanisms for the reduction in the hole concentration in lightly Al-doped p-type 4H-SiC epilayers by electron irradiation as well as in...
181
Authors: Matthieu Amigou, Marie France Beaufort, Alain Declémy, Stephanie Leclerc, Jean François Barbot
Abstract:The evolution of the normal strain induced by nitrogen implantation in 4H-SiC was investigated through X-ray diffraction measurements and...
185
Authors: Maher Soueidan, Bilal Nsouli, Gabriel Ferro, Ghassan Younes
Abstract:In this work the capability of the proton induced X-ray emission (PIXE) technique to monitor a rapid, non-destructive and accurate...
189
Authors: Xi Song, Anne Elisabeth Bazin, Jean François Michaud, Frédéric Cayrel, Marcin Zielinski, Marc Portail, Thierry Chassagne, Emmanuel Collard, Daniel Alquier
Abstract:Two electrical characterization methods were used to study 3C-SiC epilayers doped by nitrogen implantation: circular Transfer Length Method...
193
Authors: Tetsuya Miyazawa, Masahiko Ito, Hidekazu Tsuchida
Abstract:We investigate the carrier lifetimes in very thick 4H-SiC epilayers (~250 μm) by means of time-resolved photoluminescence and microwave...
197
Authors: Atsushi Koizumi, Naoya Iwamoto, Shinobu Onoda, Takeshi Ohshima, Tsunenobu Kimoto, Kazuo Uchida, Shinji Nozaki
Abstract:The effects of compensation on the hole concentration and mobility in Al-doped 4H-SiC have been investigated by theoretical calculations...
201
Authors: Jawad ul Hassan, Patrik Ščajev, Kęstutis Jarašiūnas, Peder Bergman
Abstract:Free carrier dynamics has been studied in 4H- and 3C-SiC in a wide temperature range using time-resolved photoluminescence, free carrier...
205
Showing 41 to 50 of 200 Paper Titles