Silicon Carbide and Related Materials 2010
| Paper Title | Page |
|---|---|
|
Electrically Active Defects in Electron Irradiated P-Type 6H-SiC Authors: Giovanni Alfieri, Tsunenobu Kimoto |
253 |
|
Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy Authors: Lia Trapaidze, R. Hollweck, Svetlana Beljakowa, Bernd Zippelius, Heiko B. Weber, Gerhard Pensl, Michael Krieger |
257 |
|
Authors: Tamas Hornos, Adam Gali, Bengt G. Svensson |
261 |
|
Iron-Related Defect Centers in 3C-SiC Authors: Thanos Tsirimpis, S. Beljakova, Bernd Zippelius, Heiko B. Weber, Gerhard Pensl, Michael Krieger, Hiroyuki Nagasawa, Takamitsu Kawahara, Naoki Hatta, Kuniaki Yagi, Hidetsugu Uchida, Motoki Kobayashi, Adolf Schöner |
265 |
|
Authors: Michael Dudley, Huan Huan Wang, Fang Zhen Wu, Shayan Byrappa, Balaji Raghothamachar, Gloria Choi, Edward K. Sanchez, Darren M. Hansen, Roman Drachev, Stephan G. Mueller, Mark J. Loboda |
269 |
|
Electrical Activity of Structural Defects in 3C-SiC Authors: Jens Eriksson, Fabrizio Roccaforte, Ming Hung Weng, Filippo Giannazzo, Jean Lorenzzi, Vito Raineri |
273 |
|
Authors: Harald Karpinski, Sakwe Aloysius Sakwe, Michael Fried, Eberhard Bänsch, Peter Wellmann |
277 |
|
Propagation of Stacking Faults in 3C-SiC Authors: Hiroyuki Nagasawa, Takamitsu Kawahara, Kuniaki Yagi, Naoki Hatta |
282 |
|
Etch Pits on 4H-SiC Surface Produced by ClF3 Gas Authors: Hitoshi Habuka, Kazuchika Furukawa, Keiko Tanaka, Yusuke Katsumi, Shinji Iizuka, Katsuya Fukae, Tomohisa Kato |
286 |
|
Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na2O2 Additive Authors: Yong Zhao Yao, Yukari Ishikawa, Yoshihiro Sugawara, Hiroaki Saitoh, Katsunori Danno, Hiroshi Suzuki, Yoichiro Kawai, Noriyoshi Shibata |
290 |