Paper Title
Page
Authors: Yong Zhao Yao, Yoshihiro Sugawara, Yukari Ishikawa, Hiroaki Saitoh, Katsunori Danno, Hiroshi Suzuki, Yoichiro Kawai, Noriyoshi Shibata
Abstract:Dislocations in highly doped n-type 4H-SiC (n+-SiC, n>1019 cm-3) substrate have been studied by means of electron beam induced current...
294
Authors: T. Katsuno, Y. Watanabe, Fujiwara Hirokazu, Masaki Konishi, Takeo Yamamoto, Takeshi Endo
Abstract:A new method for the separation of threading screw dislocations (TSD) and threading edge dislocations (TED) in a 4H-SiC epitaxial layer is...
298
Authors: Gan Feng, Jun Suda, Tsunenobu Kimoto
Abstract:Dislocations in 4H-SiC epilayers were imaged nondestructively by means of micro photoluminescence (-PL) mapping at room temperature. The...
302
Authors: Xuan Zhang, Masahiro Nagano, Hidekazu Tsuchida
Abstract:Interfacial dislocations are frequently observed to form during 4H-SiC epitaxy and thermal annealing. This report attempts to establish the...
306
Authors: Isaho Kamata, Xuan Zhang, Hidekazu Tsuchida
Abstract:Frank-type defects on the basal plane in thick 4H-SiC epitaxial layers converted from threading screw dislocation (TSD) have been...
310
Authors: Teddy Robert, Maya Marinova, Sandrine Juillaguet, Anne Henry, Efstathios K. Polychroniadis, Jean Camassel
Abstract:Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped...
314
Authors: Kevin Matocha, Vinayak Tilak
Abstract:The performance of 4H-SiC power MOSFETs is limited by the less than ideal electron inversion-layer mobility due to the poor quality of the...
318
Authors: Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Lars S. Løvlie, Bengt G. Svensson
Abstract:The effect of nitrogen (N) introduced by ion implantation at the SiO2/4H-SiC interface on the capacitance of the MOS capacitors is...
326
Authors: Tetsuo Hatakeyama, Hirofumi Matsuhata, T. Suzuki, Takashi Shinohe, Hajime Okumura
Abstract:SiO2/4H-SiC interfaces are examined by high-resolution transmission electron microscopy (HRTEM), high-angle annular dark-field scanning...
330
Authors: Pétur Gordon Hermannsson, Einar Ö. Sveinbjörnsson
Abstract:We report a strong reduction in the density of near-interface traps (NITs) at the SiO2/4H-SiC interface after dry oxidation in the presence...
334
Showing 71 to 80 of 200 Paper Titles