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Authors: Dai Okamoto, Hiroshi Yano, Shinya Kotake, Tomoaki Hatayama, Takashi Fuyuki
Abstract:We report on electrical and physical investigations aimed to clarify the mechanisms behind the high channel mobility of 4H-SiC...
338
Authors: Takuji Hosoi, Kohei Konzono, Yusuke Uenishi, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe
Abstract:Surface and interface morphology of thermal oxides grown on 4-off (0001) oriented 4H-SiC substrates by dry O2 oxidation was investigated...
342
Authors: Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Lars S. Løvlie, Bengt G. Svensson
Abstract:Comparative studies of gate oxides on a N+ pre-implanted area (Ninterface ~1x1019cm-3) and on a virgin Si face 4H-SiC material (Ninterface...
346
Authors: Ming Hung Weng, Simon Barker, Rajat Mahapatra, Benjamin J.D. Furnival, Nicolas G. Wright, Alton B. Horsfall
Abstract:We have investigated the annealing of fixed oxide charge and interfacial traps in MISiC strucures by means of the photo capacitance voltage...
350
Authors: Jody Fronheiser, Aveek Chatterjee, Ulrike Grossner, Kevin Matocha, Vinayak Tilak, Liang Chun Yu
Abstract:The gate oxide reliability and channel mobility of carbon face (000-1) 4H Silicon Carbide (SiC) MOSFETs are investigated. Several gate...
354
Authors: Massimo Camarda, Andrea Severino, Patrick Fiorenza, Vito Raineri, S. Scalese, Corrado Bongiorno, Antonino La Magna, Francesco La Via, Marco Mauceri, Danilo Crippa
Abstract:Using several types of surface analysis (Optical profilometers (OP), Atomic Force Microscopies (AFM), Scanning Electron Microscopies (SEM)...
358
Authors: Takeshi Ohshima, Naoya Iwamoto, Shinobu Onoda, Takahiro Makino, Shinji Nozaki, Kazutoshi Kojima
Abstract:Charge induced in 6H-SiC nMOS capacitors by 15 MeV oxygen ion microbeams was measured using Transient Ion Beam Induced Current (TIBIC) before...
362
Authors: Daniel B. Habersat, Aivars J. Lelis
Abstract:We have used C-V techniques to study the bias instability of 4H-SiC MOS capacitors and FETs, and compared those results to those obtained...
366
Authors: T. Umeda, K. Esaki, Ryouji Kosugi, Kenji Fukuda, Norio Morishita, Takeshi Ohshima, Junichi Isoya
Abstract:We present an electrically detected electron-spin-resonance (ESR) study on SiO2-SiC interface regions of n-channel lateral 4H-SiC MOSFETs...
370
Authors: Tomoaki Hatayama, Hiroyuki Suzuki, Hidenori Koketsu, Hiroshi Yano, Takashi Fuyuki
Abstract:Surface properties of the 4H-SiC (0001) Si faces could be evaluated by the contact angle measurements with water droplet method, X-ray...
374
Showing 81 to 90 of 200 Paper Titles